Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth
Abstract Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C.After 1.5 ML of the InAs wetting layer (WL) growth by ordinal Stranski–Krastanov dot fabrication procedures, we applied voltage at p